半导体常用术语.docx

《半导体常用术语.docx》由会员分享，可在线阅读，更多相关《半导体常用术语.docx（19页珍藏版）》请在优知文库上搜索。

1、Fab厂常用术语somephrasesandwordsinFABcleanroomsystemA.M.U原子质量数ADIAfterdevelopinspection显影后检视AEI蚀科后检查Alignment排成一直线，对平Alloy融合：电压与电流成线性关系，降低接触的阻值ARC：anti-reflectcoating防反射层ASHER:一种干法刻蚀方式ASI光阻去除后检查Backside晶片背面BacksideEtch背面蚀刻Beam-Current电子束电流BPSG:含有硼磷的硅玻璃Break中断，Slepper机台内中途停止键Cassette装晶片的晶舟CD：criticaldimen

2、s沁n关键性尺寸Chamber反应室Chart图表Childlot子批Chip（die）晶粒CMP化学机械研磨Coater光阻覆盖（机台）Coating涂布，光阻覆盖ContactHole接触窗ControlWafer控片Criticallayer重要层CVD化学气相淀积Cycletime生产周期Defect缺陷DEP:deposit淀积Descum预处理Developer显影液；显影（机台）Development显影DG:dualgate双门DIwater去离子水Diffusion扩散Doping掺杂Dose剂量Downgrade降级DRC:designrulecheck设计规则检查DryC

3、lean干洗Duedate交期Dummywafer挡片E/R:etchrate蚀刻速率EE设备工程师EndPoint蚀刻终点ESD:electrostaticdischarge/electrostaticdamage静电离子损伤ET:etch蚀刻Exhaust排气(将管路中的空气排除)Exposure曝光FAB工厂FIB:focusedionbeam聚焦离子束FieldOxide场氧化层Flatness平坦度Focus焦距Foundry代工FSG:含有氟的硅玻璃Furnace炉管GOI:gateoxideintegrity门氧化层完整性HeXamethyldiSiIaZane,经去水烘烤的晶片

4、，将涂上一层增加光阻与晶片表面附着力的化合物，称HCI:hotcarrierinjection热载流子注入HDP：highdensityplasma高密度等离子体High-Voltage高压Hotbake烘烤ID辨认，鉴定Implant植入Layer层次LDD:lightlydopeddrain轻掺杂漏Localdefocus局部失焦因机台或晶片造成之脏污LOCOS:localoxidationofsilicon局部氧化Loop巡路Lot批Mask(reticle)光罩Merge合并MetalVia金属接触窗MFG制造部Mid-Current中电流Module部门NIT:Si3N4氮化硅Non

5、-critical非重要NP:n-dopedplus(N+)N型重掺杂NW:n-dopedwellN阱OD:oxidedefinition定义氧化层OM:opticmicroscope光学显微镜OOC超出控制界线OOS超出规格界线OverEtch过蚀刻Overflow溢出Overlay测量前层与本层之间曝光的准确度OX:SiO2二氧化硅RR.Photoresisit光阻Pl:poly多晶硅PA;PaSSiVaHOn钝化层Parentlot母批Particle含尘量/微尘粒子PE:1.processengineer;2.plasmaenhance1s工艺工程师2、等离子体增强PH:photo黄光

6、或微影Pilot实验的Plasma电浆Pod装晶舟与晶片的盒子Polymer聚合物PORProcessofrecordPP:p-dopedplus(P+)P型重掺杂PR:photoresist光阻PVD物理气相淀积PW:p-dopedwellP阱Queuetime等待时间R/C:runcard运作卡Recipe程式Release放行Resistance电阻Reticle光罩RF射频RM:remove.消除Rotation旋转RTA:rapidthermalanneal迅速热退火RTP:rapidthermalprocess迅速热处理SA:salicide硅化金属SAB:salicidebloc

7、k硅化金属阻止区SAC:sacrificeIayer牺牲层Scratch刮伤Selectivity选择比SEM：scanningelectronmicroscope扫描式电子显微镜SlOt槽位Source-Head离子源SPC制程统计管制Spin旋转SpinDry旋干Sputter溅射SRSirichoxide富氧硅Stocker仓储Stress内应力STRIP:一种湿法刻蚀方式TEOS-(CH3CH2O)4Si四乙氧基硅烷/正硅酸四乙酯，常温下液态。作LPeVD/PECVD生长Si02的原料。又指用TEOS生长得到的Si02层。Ti钛TiN氮化钛TM:topmetal顶层金属层TORTool

8、ofrecordUnderEtch蚀刻不足USG:undoped硅玻璃W(Tungsten)鸨WEE周边曝光Yield良率EOT:有效栅极氧化层厚度HK/MG：highk/金属栅ALD：原子层沉积(atomlayerdeposition)DHF：稀释的HFTermExplanationCESLContactetchstoplayerDIBLDraininducedbarrierloweringEOTEquivalentoxidethicknessFERFinEdgeRoughnessGERGateEdgeRoughnessICIntegratedcircuitITRSInternational

9、technologyroadmapforsemiconductorsLERLineedgeroughnessMGGMetalgategranularityNBTlNegativebiastemperatureinstabilityPBTlPositivebiastemperatureinstabilityRDDRandomdiscretedopantsRMSRootmeansquareTCADTechnologycomputeraideddesignSRAMStaticrandomaccessmemoryVAMVariabilityawaremodelVAMIFVariabilityaware

10、modelinterface专业术语大集合话题：专业术语大集合Engineer工程PE:ProductsEngineer;生羟工程Processengineer制程工程TE:lestEngineer测就工程ME:ManufacturingEngineer;裂造工程；MechanicalEngineer械工程IE:IndustrialEngineer工蕖工程DCC:DocumentControlCenter文管中心BOM:BillOFMaterial材料清军ECN:EngineeringChangeNotice工程燮勃公告TECN:TemporaryEngineeringChangeNotice

11、工程陶畤夔勃公告AlY:AssemblyTestYieldTotalYield直通率TPM:TotalProductivityMaintenancePM:ProductManager;ProjectManagerECR:EngineeringChangeRequest工程燮更申ECO:EngineeringChangeRequest工程燮更指令EN:EngineeringNotice工程通辍WPS:WorkProcedureSheet工作l明耆ICT:InCircuitlest甯路测器能P/R:pilotrun;C/RcontrolrunT/Rtrialrun做EVT:engineerVeri

12、ficationlest工程瞬言正混DVT:DesignVerificationlest喉H涓JSMVT:MassVerificationlest多项瞬瞪涓ORT:OnGoingReliabilityTest出货信引性泅感S/W:software就:件H/W:hardware硬件DCN:DesignChangeNotice言I嘤更通知PVT:ProductionVerificationlest生j瞬BS测就MTF:ModulationTransferFunction调整樽换功能CAT:CarriageAlignmentTool戴器调整具ID:IndustrialDesignIMISKBlSti

13、)PCBA:PrintedCircuitBoardAssembly甯路板装F/T:FunctionTest功能测SCCD:ChargeCoupledDevice描描器之器ERS:ExternalReferenceSpec外部规格PMP:ProductionManagementPlan工程管理笥倒QAQualityAssurance量保QRA的UaIity&ReliabilityAssurance量典可靠性保瞪MQAManufacturingQualityAssurance裂造量保BSDQA:DesignQualityAssurance司贺量保BSQC:QualityControl,量控制IQC

14、:IncomingQualityControl收益量控制VQC:VendorQualityControl售：量控制IPQC:InProcessQualityControl制程量控制OQA:OutgoingQualityControl出量控制QE:QualityEngineer量工程AQL:AcceptableQualityLevel可接受的量水平DPPM:DefectivePiecesPerMillionunits百离件中有损件数PPM:PiecesPerMillion百离分之一CS:CustomService客服牙务MRB:MarerialReviewBoardDMRDefectiveMat

15、erialReport材料缺陷甄告RMA:ReturnMarerialAdministration材料回收虑理LifeTest毒命涓T/C:TemperatureCycle湍l度循H/T:HighTemperaturelest高温涓ML/T:LowTemperatureTest低温涓ISO:InternationalStandardOrganization斜票型化余口SPC:Statisticprocesscontrol统言十谩程控制5S:整理,整屯曳清理.清掘.素善VMI:VisualMechanicalInspection外Sg械横横购iMIL-STD:MilitaryStandard美罩檄型SPEC:Spe